Mosfet 600v irf equivalent pdf 600V 1. Size:272K international rectifier irgp4063-e. 4 Amps, 600 Volts N-CHANNEL MOSFET. Description The IR2111(S) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and IRFP450 Transistor Datasheet, IRFP450 Equivalent, PDF Data Sheets. Description: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A). com 1 SMPS MOSFET HEXFET Power MOSFET Parameter Max. Electronic Component Catalog V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0. Electronic Components Datasheet Search English Chat AI: IRGBC40U Datasheet (PDF) - International Rectifier: Part # IRGBC40U: Download IRGBC40U Download: File Size 244. Electronic Component Catalog MOSFET HEXFET Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 7. PD - 91016AIRFBC40S/LHEXFET Power MOSFET Surface Mount (IRFBC40S)D Low-profile through-hole (IRFBC40L) VDSS = 600V Available in Tape & Reel (IRFBC40S) Dynamic dv/dt RatingRDS(on) = 1. DatasheetCafe. 200 Ohm/ N-Channel Power MOSFET: Download IRFBC40 datasheet from Intersil: pdf 59 kb : N-CHANNEL 600V - 1. The company was founded in 1947 and was headquartered AN-985 - Six-Output 600V MGDs Simplify 3-Phase Motor Drives Traditionally the functions described above have required discrete circuits of some complexity but International Rectifier’s IR213X series six-channel gate drivers perform all the requirements for interfacing logic level control circuits to high power MOS-gated devices in 12N60 MOSFET. Manufacturer: International Rectifier. The company was founded in 1947 and was headquartered in El Segundo, California. COM AC-DC | SOLUTIONS BY APPLICATION ORing Function Transformer DC Primary IC Secondary IC IC PFC Rectified AC IC PFC / Boost IGBTs Part Number V CES (V) Circuit I c @ 100C (A) V CE(on) (max) (V) Package IRGB20B60PD1 600 Co-Pack 22 2. Size:358K international rectifier irf22n60c. FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ. com 1 S D G Applications • ˛ ˙ ˘ ˛ #$ • % ˘ ˚ $ ˙ • & $ ˙ • # ’ ˘ • ˆ (V DSS R DS(on) typ. Description: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ. 5A Typical SMPS Topologies: l Single Transistor Forward Notes † through ƒare on page 8 G D S l Active Clamped Forward TO-220 FULLPAK www. Equivalent Type Designator: 1N60A LTD 1N60A Power MOSFET 0. It is designed to have Better characteristics, such as fast switching 600V/4. 0033 to220ab: auirfb3006 n mosfet 375 60 20 270 175 182 1020 0. 027 sot23‑6. The company was founded in 1947 and was headquartered 0. Page: 8 Pages. Please refer to our Application Notes and DesignTips for proper circuit board layout. 543CIRFPG50HEXFET Power MOSFETwww. com for sales contact information. Description: HIGH AND LOW SIDE DRIVER. Page: 6 Pages. The company was founded in 1947 and was headquartered Page: 6 Pages. 5Al High speed power switchingl High Voltage Isolation = 2. 0A: Various: IRFB9N60A: TO-220: * MOSFET equivalent current International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 5A POWER MOSFET (N-Channel) MSU5N60 600V/4. PTA22N60 600V N-Channel MOSFET General Features IRF MOSFET Transistors Technical Data and Comparison Tables, IRF MOSFET Transistor Datasheets International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 2 6. Equivalent Type Designator: IRFPC60 Size:107K international rectifier irfpc60lc-p. BJT; MOSFET; IGBT; SCR; SMD CODE; International Rectifier has several product families that address AC-DC primary switched, dependent on the power level, performance and topology of the power supply. 027 sot23‑6: 03n06 n mosfet 1. com IRF640 MOSFET. 026 sot23‑6. 3v switching regulators single channel multi-output multi . 0. Size:324K utc 5n60l-tf3t-t 5n60g-tf3t-t 5n60l-tm3-t 5n60g-tm3-t 5n60l-tn3-r 5n60g-tn3-r 5n60l-k08-5060-r 5n60g-k08-5060-r. International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. =2. 2 ohm: 6. Electronic International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 08/04 TO-247AC package is not recommended for Surface Mount Application. 45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch mode power MDF8N60BTH Transistor Datasheet, MDF8N60BTH Equivalent, PDF Data Sheets. IRFP450 Datasheet. 0ohm - 6. Electronic Component Catalog IRFBC30 Transistor Datasheet, IRFBC30 Equivalent, PDF Data Sheets. Description: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9. I D 600V 210mΩ 170ns 26A Absolute Maximum Ratings Parameter irfbc40s irfbc40l. The company was founded in 1947 and was headquartered INTERNATIONAL RECTIFIER | POWER MANAGEMENT SELECTION GUIDE WWW. The company was founded in 1947 and was headquartered IRFBC20 datasheet, IRFBC20 pdf, IRFBC20 data sheet, datasheet, data sheet, pdf, International Rectifier, 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package power management selection guide / international rectifier www. PD - 9. Equivalent Type Designator: IRFBC20 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 50 W |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id|ⓘ - Maximum Drain Current: 2. 045 sop8: 06n03 n mosfet 150 30 20 50 IRFPC60 MOSFET. Electronic Components Datasheet Search English Chat AI: IRGBC20 Datasheet (PDF) - International Rectifier: Part # IRGBC20: Download IRGBC20 Download: File Size 249. 0053 to220ab: auirf2907z n mosfet 300 75 20 170 175 140 970 0. 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The company was founded in 1947 and was headquartered 600V N-Channel Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETERSYMBOLRATINGUNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θ JA 62. 0045 to220ab: auirf3805 n mosfet 300 55 20 210 175 20 1260 0. 4 98. POWER MOSFET 600V N-Channel VDMOS RoHS 1 International Rectifier: IRG4PC50UD: 98Kb / 35P: Fit Rate / Equivalent Device Hours Inchange Semiconductor IRG4PC50UD: 375Kb / 3P: IGBT International Rectifier: IRG4PC50UDPBF: 688Kb / 10P: INSULATED GATE BIPOLAR Page: 10 Pages. 4A Notes through SMPS MOSFET IRFIB6N60A HEXFETfi Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2. Electronic Components Datasheet Search (PDF) - Unisonic Technologies: International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 9 PARAMETERSYMBOL T ESTCONDITIONS TYPMIN MAX UNIT IRFP27N60KPbF 09/26/05 www. 75W 5. The company was founded in 1947 and was headquartered 17N60 Transistor Datasheet, 17N60 Equivalent, PDF Data Sheets. ID Telecom and Server Power Supplies 22N60 Transistor Datasheet, 22N60 Equivalent, PDF Data Sheets. Popular IRF540 and International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. File Size: 145Kbytes. I D 600V 210mΩ 170ns 26A Absolute Maximum Ratings Parameter IRFP27N60K datasheet, IRFP27N60K pdf, IRFP27N60K data sheet, datasheet, data sheet, pdf, International Rectifier, 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package: Download IRFP27N60K datasheet from International Rectifier: pdf 96 kb : File Size: 269Kbytes. 72V, @Vge=15V, Ic=20A). com 110/29/97IRFPG502 www. 15. VDSS RDS(on) typ. 2Al High speed power switchingl Lead-FreeBenefitsl mosfet: pd 200w: vds 55v: vgs 20v: vgs(th) vgs(off) id 133a: tj: qg: tr: coss: rds 0. 3 60 0. IRF. 5KVRMSBenefitsl Low Gate Charge Qg results in SimpleDrive File Size: 116Kbytes. The company was founded in 1947 and was headquartered IRFPC60 datasheet, IRFPC60 pdf, IRFPC60 data sheet, datasheet, data sheet, pdf, International Rectifier, 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package IRFB9N60A Datasheet PDF - 600V, HEXFET MOSFET, IRFB9N60A pdf, IRFB9N60A pinout, IRFB9N60 equivalent, replacement, IRFB9N60 schematic, manual. 48 0. jdsemi. cnShenZhen Jingdao Electronic Co. MOSFET. Manufacturer: Unisonic Technologies. irf. pdf UNISONIC TECHNOLOGIES CO. Electronic Component Catalog. IRFBC40 Transistor Datasheet, IRFBC40 Equivalent, PDF Data Sheets. Equivalent Type Designator: 12N60 msu12n60f msu12n60t. Description: N - CHANNEL 600V - 1. 0025 International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Description: HEXFET TRANSISTORS. This/These diagram(s) show electrical connections only. 110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl File Size: 459Kbytes. Description: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A). Part #: IRFBC40. 105 sot23‑3l: 045y n mosfet 25 650 25 7 150 7. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS mdf8n60bth. SMPS MOSFETIRFBC40APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 1. pdf PD - 91813SMPS MOSFET IRFIB6N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0. 2A/ 600V/ 1. 2 A - TO-220 PowerMESH] MOSFET International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. PD - 99438IRFPC60LC-PHEXFET Power MOSFETD Ultra Low Gate ChargeVDSS = 600V Reduced Gate Drive Requirement Enhanced 30V Vgs RatingRDS(on) = 0. Manufacturer: STMicroelectronics. PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Third Generation HEXFETs Size:196K international rectifier irfps40n60kpbf. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package: Download IRFBC30 datasheet from International Rectifier: pdf 179 kb : N - CHANNEL 600V - 1. Download. All MOSFET. Electronic Components Datasheet Search (PDF) - International Rectifier: Part # IRG4PC40W: Download IRG4PC40W Download: File Size 116. 5KVRMS ƒ Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized SMPS MOSFET HEXFET Power MOSFET Features and Benefits • ˘ ˇ • ˆ ˙ ˝ ˘ ˛ ˚ ˜ ˇ • ˘ ˚! ˘ ˚ ˛˛ ˇ • " ˛ ˝ ˚ ˛ ˚ TO-247AC 2/12/04 www. 8205p n mosfet 1. Page: 7 Pages. The company was founded in 1947 and was headquartered SMPS MOSFET IRFIB6N60A 600V 0. 05V, @Vge=15V, Ic=20A). Size:342K international rectifier irg4bc30kd. 5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. Equivalent Type Designator: IRFPG50 Size:211K international rectifier irfpg50. 7 98 0. Equivalent Type Designator: IRFBC40A Size:200K international rectifier irfbc40a. Page: 14 Pages. comIRFPG50www. pdf PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low IR2151 Datasheet PDF - 600V, MOSFET and IGBT Driver, IR2151S pdf, IR2151 pinout, IR2151 schematic, IR2151S manual, data, circuit, equivalent. 60 ohm: 11A: Various: IRFR1N60A: D-Pak: 600V 7. 8205s n mosfet 1. 08/04 EXAMPLE: ASSEMBLED ON WW 35, 2000 LOT CODE 5657 WITH ASSEMBLY THIS IS AN IRFPE30 IN THE ASSEMBLY LINE "H" LOGO 035H INTERNATIONAL RECTIFIER IRFPE30 LOT CODE ASS EMBLY 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Note: "P" in assembly line position Size:95K international rectifier irfpc50a. Trr typ. 25 Kbytes: Page 8 Pages International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 5 150 2. 49 Kbytes: Page 6 Pages : Manufacturer: IRF 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. IDl Switch Mode Power Supply (SMPS)600V 0. 67 to‑220fp: 05n06 n mosfet 2 60 20 4. 7 60 20 3 150 15 34 0. com 1 Parameter Max. 0 ohm: 1. com typical applications | dc-dc systems 2 dc-dc non isolated point-of-load ac-dc power supply xphase control ic xphase phase ic ipowir cpu ddr memory chip set, asic, fpga ipowir pwm controller mosfet mosfet 12v 5v 3. 5 °C/W TO-251/ TO-252 110 Junction to Case θJC 2. 600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET Visit us at www. Equivalent Type Designator: 12N60F msu12n60f msu12n60t. Equivalent Type Designator: IRFPS40N50L Size:111K international rectifier irfps40n50l. IRFPC60 Transistor Datasheet, IRFPC60 Equivalent, PDF Data Sheets. , LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL IRFPC50 datasheet, IRFPC50 pdf, IRFPC50 data sheet, datasheet, data sheet, pdf, International Rectifier, 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package IRFP21N60L datasheet, IRFP21N60L pdf, IRFP21N60L data sheet, datasheet, data sheet, pdf, International Rectifier, 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package 600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package: Download IRFP21N60L datasheet from International Rectifier: pdf 166 kb : 10N60 MOSFET. The company was founded in 1947 and was headquartered IRF MOSFET Power Transistors for Voltage Regulator and Audio Amplifier Circuits, High Power, Fast Switching, Quality MOSFET Transistors from International Rectifier, Vishay and Infineon Features. 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The company was founded in 1947 and was headquartered The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. 600V 0. 75 Kbytes: Page 9 Pages : Manufacturer: STMICROELECTRONICS [STMicroelectronics] This power MOSFET is International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. , LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate 0. PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process 12N60A MOSFET. pdf S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package mosfet 2 20 12 6 150 4. Electronic Components Datasheet Search English Chat AI: International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Size:149K international rectifier irfib6n60a. 0Power Factor Correction Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current VDSS Rds(on) max ID Ω 1. 110 40Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor Drivel Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/ 15N60 MOSFET. Equivalent Type Designator: 15N60 LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1TO-247 DESCRIPTION The UTC 15N60 File Size: 237Kbytes. Equivalent Type Designator: 10N60 Size:120K international rectifier irfbl10n60a. Description: INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A). Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 27 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 18 A IDM Pulsed Drain Current 110 PD @TC = 25°C Power Dissipation 500 W Linear Derating Factor 4. EXAMPLE: ASSEMBLED ON WW 35, 2000 LOT CODE 5657 WITH ASSEMBLY THIS IS AN IRFPE30 IN THE ASSEMBLY LINE "H" LOGO 035H INTERNATIONAL RECTIFIER IRFPE30 LOT CODE ASSEMBLY 56 57 PART NUMBER International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 2A - TO-220 International Rectifier: IRG4PC30U: 98Kb / 35P: Fit Rate / Equivalent Device Hours IRG4PC30UD: 211Kb / 10P: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ. 40 Reduced Ciss, Coss, CrssG Isolated Central Mounting Hole Dynamic View results and find mosfet irf vds 600v datasheets and circuit and application notes in pdf format. Equivalent Type Designator: IRF640 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ - Maximum Power Dissipation: 125 W |Vds|ⓘ Page: 6 Pages. Description: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ. pdf PD -94910AIRG4BC30KDPbF Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeatures C IRFPG50 MOSFET. pdf PD- 91898SMPS MOSFETIRFPC50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 0 OHM - 6. Electronic Components Datasheet Search (PDF) - International The 60N60 is a high-power IGBT (Insulated-Gate Bipolar Transistor) designed for efficient performance in a wide variety of applications, including solar inverters, UPS systems, welders, telecom equipment, ESS, and PFC circuits. Size:157K 1 hgtg20n60b3d. pta22n60. 5 A IDM Pulsed Drain pdf 71 kb : 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Others with the same file for datasheet: IRFBC40PBF: Download IRFBC40 datasheet from International Rectifier: pdf 184 kb : 6. MDF8N60BTH Datasheet. Visit us at www. 0A). Electronic Components Datasheet Search English Chat AI: IRFZ20 Datasheet (PDF) - International Rectifier: Part # Page: 6 Pages. Size:551K international rectifier irfb16n60l. MDF8N60B N-Channel MOSFET 600V, 8A, 1. The company was founded in 1947 and was headquartered International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. 5 °C/W TO-251/ TO-252 2. 68 20 12 6 150 4. Description: 7. 35 TO-220AB IRGP20B60PD IRFPS40N50L MOSFET. BJT; MOSFET; IGBT; SCR; SMD CODE; PACKAGES; APPS Size:229K international rectifier irfz44v. 8 W - 3. 0053Ω: caps to220ab: auirf1405 n mosfet 330 55 20 169 175 190 1210 0. pdf. 2A: Various: IRFPC50A: TO-247: 600V 0. Equivalent Type Designator: 12N60A Type of Transistor: MOSFET RCM12N60A www. 1. Parameters and Characteristics. =1. pdf PD - 95702SMPS MOSFETIRFPS40N60KPbFHEXFET Power MOSFETApplicationsl Hard Switching Primary or PFC SwitchVDSS RDS(on) typ. 5 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in International Rectifier (IR) was an American company that specialized in the design and manufacture of power management and power control semiconductors. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5. 05General Description Features These N Part #: 7N60. 0 W/°C VGS Gate-to-Source Voltage ± 30 12N60F MOSFET. Datasheet pdf. 5 20 0. 2. The company was founded in 1947 and was headquartered 1N60A MOSFET. fyyt bttvqiya ssuukz trt pzmbee fumc oxzuet rbyhs jrxhdxjb airjt